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Volumn 56, Issue 3, 1997, Pages 308-314

Temperature dependence of luminescence spectra related to free carrier and exciton recombination in GaAs quantum wells

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; CHARGE CARRIERS; ELECTRON ENERGY LEVELS; ELECTRONIC DENSITY OF STATES; LUMINESCENCE OF INORGANIC SOLIDS; SEMICONDUCTING GALLIUM ARSENIDE; SPECTRUM ANALYSIS; TEMPERATURE;

EID: 0031232272     PISSN: 00318949     EISSN: None     Source Type: Journal    
DOI: 10.1088/0031-8949/56/3/015     Document Type: Article
Times cited : (20)

References (32)
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    • Chemla, D. S., Helv. Phys. Acta, 56, 607 (1983); Chemla, D., Miller, D. A. B., Smith, P. W., Gossard, A. C. and Wiegmann, W., IEEE J. Quant. Elec. QE-20, 265 (1984); Colocci, M., Gurioli, M. and Vinattieri, A., Physica Scripta, T39, 211 (1991).
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    • Chemla, D.S.1
  • 8
    • 3042876094 scopus 로고
    • Chemla, D. S., Helv. Phys. Acta, 56, 607 (1983); Chemla, D., Miller, D. A. B., Smith, P. W., Gossard, A. C. and Wiegmann, W., IEEE J. Quant. Elec. QE-20, 265 (1984); Colocci, M., Gurioli, M. and Vinattieri, A., Physica Scripta, T39, 211 (1991).
    • (1991) Physica Scripta , vol.T39 , pp. 211
    • Colocci, M.1    Gurioli, M.2    Vinattieri, A.3
  • 10
    • 0000086537 scopus 로고
    • Cingolani, R. and Ploog, K., Adv. Physics 40, 535 (1991); Weisbuch, C., "Semiconductors and Semimetals" (Edited by R. Dingle) (Academic Press, San Diego 1987), Vol. 24, p. 1.
    • (1991) Adv. Physics , vol.40 , pp. 535
    • Cingolani, R.1    Ploog, K.2
  • 11
    • 0011575377 scopus 로고
    • (Edited by R. Dingle) Academic Press, San Diego
    • Cingolani, R. and Ploog, K., Adv. Physics 40, 535 (1991); Weisbuch, C., "Semiconductors and Semimetals" (Edited by R. Dingle) (Academic Press, San Diego 1987), Vol. 24, p. 1.
    • (1987) Semiconductors and Semimetals , vol.24 , pp. 1
    • Weisbuch, C.1
  • 15
    • 77957078386 scopus 로고
    • (Edited by R. K. Wilardson and A. C. Beer) Academic Press, New York
    • Bebb, H. B. and E. W. Williams, E. W., "Semiconductors and Semimetals" (Edited by R. K. Wilardson and A. C. Beer) (Academic Press, New York 1972), Vol. 8, p. 321.
    • (1972) Semiconductors and Semimetals , vol.8 , pp. 321
    • Bebb, H.B.1    Williams, E.W.2
  • 21
    • 33646424593 scopus 로고
    • See for example Adachi, S., J. Appl. Phys. 58, R1 (1985), "Landolt-Börnstein, Numerical Data and Functional Relationship in Science and Technology, New Series III/17a and III/22a", (Edited by O. Madelung) (Springer, Berlin, 1982 and 1987); "Properties of Gallium Arsenide, EMIS Data Series No. 2" (INSPEC, The Institute of Electrical Engineers, London 1990).
    • (1985) J. Appl. Phys. , vol.58
    • Adachi, S.1
  • 23
    • 0004242004 scopus 로고
    • INSPEC, The Institute of Electrical Engineers, London
    • See for example Adachi, S., J. Appl. Phys. 58, R1 (1985), "Landolt-Börnstein, Numerical Data and Functional Relationship in Science and Technology, New Series III/17a and III/22a", (Edited by O. Madelung) (Springer, Berlin, 1982 and 1987); "Properties of Gallium Arsenide, EMIS Data Series No. 2" (INSPEC, The Institute of Electrical Engineers, London 1990).
    • (1990) Properties of Gallium Arsenide, EMIS Data Series No. 2
  • 24
    • 85033311851 scopus 로고    scopus 로고
    • Chemla, D. S. et al., (Ref. [6])
    • Chemla, D. S. et al., (Ref. [6]).
  • 25
    • 33746664420 scopus 로고
    • The T dependence of the generation rate (G) of the free carriers, arising due to change in the complex dielectric function at 632.8 nm may be estimated to be negligible for T changing from 22 to 253 K, using the data of Lautenschlager, P., Garriga, M., Logothetidis, S. and Cardona, M., Phys. Rev. B35, 9174 (1987).
    • (1987) Phys. Rev. , vol.B35 , pp. 9174
    • Lautenschlager, P.1    Garriga, M.2    Logothetidis, S.3    Cardona, M.4
  • 28


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.