Picosecond time evolution of free electron-hole pairs into excitons in GaAs quantum wells

Physical Review B - Condensed Matter and Materials Physics

Volumn 54, Issue 7, 1996, Pages 4891-4897

  Kumar, Rajesh ^a   Vengurlekar, A ^a   Prabhu, S ^a   Shah, Jagdeep ^b  

^a TATA INSTITUTE OF FUNDAMENTAL RESEARCH   (India)

^b LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000871891     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.54.4891     Document Type: Article

References (23)

1. T. C. Damen, J. Shah, D. Y. Oberli, D. S. Chemla, J. E. Cunningham and J. M. Kuo, Phys. Rev. B 42, 7434 (1990).
2. T. C. Damen, J. Shah, D. Y. Oberli, D. S. Chemla, J. E. Cunningham and J. M. Kuo, J. Lumin. 45, 181 (1990).
3. P. W. M. Blom, P. J. van Hall, C. Smit, J. P. Cuypers and J. H. Wolter, Phys. Rev. Lett. 71, 3878 (1993).
4. B. Deveaud, B. Sermage, and D. S. Katzer, J. Phys IV (Paris) Colloq. 3, C5-11 (1993).
5. D. Robart, X. Marie, B. Baylac, T. Amand, M. Brousseau, G. Bacquet, G. Debart, R. Planel and J. M. Gerard, Solid State Commun. 95, 287 (1995).
6. S. S. Prabhu, A. S. Vengurlekar and J. Shah, Phys. Rev. B 53, 10t465 (1996).
7. A. Honold, L. Schultheis, J. Kuhl and C. W. Tu, Phys. Rev. B 40, 6442 (1989).
8. A. Thilagam and J. Singh, J. Lumin. 55, 11 (1993).
9. A. Vinnattieri, J. Shah, T. C. Damen, D. S. Kim, L. N. Pfeiffer, M. Z. Maialle and L. J. Sham, Phys. Rev. B 50, 10t868 (1994).
10. R. Cingolani and K. Ploog, Adv. Phys. 40, 535 (1991).
11. C. Weisbuch, Semiconductors and Semimetals (Academic Press, San Diego, 1987), Vol. 24.
12. R. Eccleston, R. Strobel, W. W. Rühle, J. Kuhl, B. F. Feuerbacher and K. Ploog, Phys. Rev. B 44, 1395 (1991).
13. J. F. Zieglar and J. E. E. Bagia, J. Appl. Phys 42, 2031 (1971).
14. Y. Chen, G. P. Kothiyal, J. Singh and P. K. Bhattacharya, Superlatt. Microstruct. 3, 657 (1987).
15. J. Christen and D. Bimberg, Phys. Rev. B 42, 7213 (1990).
16. M. Capizzi, S. Modesti, A. Frova, J. L. Staehli, M. Guzzi and R. A. Logan, Phys. Rev. B 29, 2028 (1984).
17. G. Bastard, Wave Mechanics Applied to Semiconductor Heterostructures (Halsted Press, New York, 1988).
18. E. Grilli, M. Guzzi, R. Zamboni and L. Pavesi, Phys. Rev. B 45, 1638 (1992).
19. The corresponding increase is 3.3 μm for a 5 μm spot. The diffusion effect on the carrier density thus can be important for a sharply focused laser spot on the sample, smaller than the diffusion length, as pointed out by E. Okuno, T. Hori, N. Sawaki, I. Akasaki and R. Höpfel, Jpn. J. Appl. Phys. 31, L148 (1992). It may also be important when the diffusion coefficient is enhanced due to very high density excitations [N. J. Frigo, H. Mahn, and D. J. Erskine, IEEE J. Quantum Electron QE-18, 192 (1982)], and also in vertical direction in bulk crystals, and in CW experiments, as shown by Capizzi et. al (Ref. 13).
20. J. Shah, Phys. Rev. B 9, 562 (1974).
21. D. S. Chemla, Helv. Phys. Acta 56, 607 (1983).
22. M. Colloci, M. Gurioli and A. Vinattieri, J. Appl. Phys. 68, 6 (1990).
23. P. W. M. Blom, R. F. Mols, J. E. M. Haverkort, M. R. Leys and J. H. Wolter, Superlatt. Microstruct. 7, 319 (1990).