Plasma deposition of silicon nitride-like thin films from organosilicon precursors

Plasmas and Polymers

Volumn 1, Issue 1, 1996, Pages 3-16

  Fracassi, F ^a   D'Agostino, R ^a  

^a UNIVERSITY OF BARI   (Italy)

Author keywords

Absorption coefficient; Plasma enhanced chemical vapor deposition; Refractive index; Silicon nitride like films

Indexed keywords

AMMONIA; CHEMICAL BONDS; CHEMICAL VAPOR DEPOSITION; FILM GROWTH; LIGHT ABSORPTION; LOW TEMPERATURE OPERATIONS; MIXTURES; NITROGEN; PLASMAS; REFRACTIVE INDEX; SILICON NITRIDE; THIN FILMS;

HEXAMETHYLCYCLOTRISILAZANE; HEXAMETHYLDISILAZANE; ORGANOSILICON PRECURSORS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

PLASMA APPLICATIONS;

EID: 0030105818     PISSN: 10840184     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02532811     Document Type: Article

References (4)

1. R. d'Agostino, ed., Plasma Deposition, Treatment, and Etching of Polymers, Academic Press, San Diego (1990).
2. H. K. Yasuda, in Plasma Polymerization, Academic Press, Orlando (1985).
3. H. J. Stein, V. A. Wells, and R. E. Hempy, J. Electrochem. Soc. 126, 1750 (1979).
4. C. Juang, J. H. Chang, and R. J. Hwang, J. Vac. Sci. Technol. B 10, 1221 (1992).