Reflection anisotropy spectroscopy, surface photovoltage spectroscopy, and contactless electroreflectance investigation of the InP/In0.53Ga0.47As(001) heterojunction system

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 4, 1996, Pages 3089-3094

  Leibovitch, M ^a  

^a Interface Studies Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CALCULATIONS; ELECTROOPTICAL EFFECTS; FERMI LEVEL; INTERFACES (MATERIALS); METALLORGANIC VAPOR PHASE EPITAXY; OSCILLATIONS; REFLECTOMETERS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SPECTROSCOPIC ANALYSIS;

CONDUCTION BAND OFFSETS; CONTACTLESS ELECTROREFLECTANCE; INDIUM GALLIUM ARSENIDE; POISSON EQUATIONS; REFLECTION ANISOTROPY SPECTROSCOPY; SURFACE PHOTOVOLTAGE SPECTROSCOPY; VALENCE BAND OFFSETS;

HETEROJUNCTIONS;

EID: 0030190516     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589069     Document Type: Article

References (19)

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