Atomic scale characterization of a-Si : H/a-SiC : H interface structures

Solar Energy Materials and Solar Cells

Volumn 49, Issue 1-4, 1997, Pages 45-51

  Miyazaki, S ^a   Yoshida, Y ^a   Miyoshi, Y ^a   Hirose, M ^a  

^a HIROSHIMA UNIVERSITY   (Japan)

Author keywords

a Si:H a SiC:H heterointerfaces

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHARACTERIZATION; CONFORMATIONS; CRYSTAL ATOMIC STRUCTURE; FILM GROWTH; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HYDROGEN BONDS; INTERFACES (MATERIALS); REFLECTION; RELAXATION PROCESSES; X RAY PHOTOELECTRON SPECTROSCOPY;

ATOMIC SCALE STRUCTURE; FOURIER TRANSFORM INFRARED ATTENUATED TOTAL REFLECTION; HETEROINTERFACES;

HETEROJUNCTIONS;

EID: 0031364434     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-0248(97)00174-8     Document Type: Article

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