Spatially varying effective mass effects on energy level populations in semiconductor quantum devices

Superlattices and Microstructures

Volumn 32, Issue 1, 2002, Pages 1-9

  Imam, N ^a   Glytsis, E N ^a   Gaylord, T K ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Absorption coefficient; Effective mass; Fermi energy; Intersubband

Indexed keywords

ABSORPTION; APPROXIMATION THEORY; EIGENVALUES AND EIGENFUNCTIONS; LASER APPLICATIONS; OPTOELECTRONIC DEVICES; PHOTODETECTORS; RESONANCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS; SQUIDS;

ABSORPTION COEFFICIENT; CONDUCTION BANDS; EFFECTIVE MASS; ELECTRON MASS; INTERSUBBAND; VALENCE BANDS;

FERMI LEVEL;

EID: 0012379070     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1006/spmi.2002.1051     Document Type: Article

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