-
1
-
-
0018545753
-
Ballistic transport in semiconductors at low temperatures for low-power highspeed logic
-
M.S. Shur and L.F. Eastman, “Ballistic transport in semiconductors at low temperatures for low-power highspeed logic,” IEEE Trans. Electron Devices, vol. ED-26, pp. 1677–1683, 1979.
-
(1979)
IEEE Trans. Electron Devices
, vol.26 ED
, pp. 1677-1683
-
-
Shur, M.S.1
Eastman, L.F.2
-
2
-
-
0001468271
-
Injected hot electron transport in GaAs
-
A.F.J. Levi, J.R. Hayes, P.M. Platzman, and W. Wiegmann, “Injected hot electron transport in GaAs,” Phys. Rev. Lett., vol. 55, pp. 2071–2073, 1985.
-
(1985)
Phys. Rev. Lett.
, vol.55
, pp. 2071-2073
-
-
Levi, A.F.J.1
Hayes, J.R.2
Platzman, P.M.3
Wiegmann, W.4
-
3
-
-
0000043698
-
Direct observation of ballistic electron transport in GaAs
-
M. Heiblum, M.I. Nathan, D.C. Thomas, and C.M. Knoedler, “Direct observation of ballistic electron transport in GaAs,” Phys. Rev. Lett., vol. 55, pp. 2200–2203, 1983.
-
(1983)
Phys. Rev. Lett.
, vol.55
, pp. 2200-2203
-
-
Heiblum, M.1
Nathan, M.I.2
Thomas, D.C.3
Knoedler, C.M.4
-
4
-
-
0014707790
-
Superlattice and negative differential conductivity in semiconductors
-
L. Esaki and R. Tsu, “Superlattice and negative differential conductivity in semiconductors,” IBM J. Res. Develop., pp. 61–65, 1970.
-
(1970)
IBM J. Res. Develop.
, pp. 61-65
-
-
Esaki, L.1
Tsu, R.2
-
5
-
-
0000960465
-
Possible application of surface-corrugated quantum thin films to negative resistance devices
-
H. Sakaki, K. Wagatsuma, J. Hamasaki, and S. Saito, “Possible application of surface-corrugated quantum thin films to negative resistance devices,” Thin Solid Films, vol. 36, p. 497, 1976.
-
(1976)
Thin Solid Films
, vol.36
, pp. 497
-
-
Sakaki, H.1
Wagatsuma, K.2
Hamasaki, J.3
Saito, S.4
-
6
-
-
0001950188
-
Physical limits of heterostructure fieldeffect transistors and possibilities of novel quantum fieldeffect devices
-
Sept.
-
H. Sakaki, “Physical limits of heterostructure fieldeffect transistors and possibilities of novel quantum fieldeffect devices,” IEEE J. Quantum Electron., vol. QE-22, pp. 1845–1852, Sept. 1986.
-
(1986)
IEEE J. Quantum Electron.
, vol.22 QE
, pp. 1845-1852
-
-
Sakaki, H.1
-
7
-
-
21544482969
-
Resonant tunneling transistor with quantum well base and high-energy injection: A new negative differential resistance devices
-
F. Capasso and R.A. Kiehl, “Resonant tunneling transistor with quantum well base and high-energy injection: A new negative differential resistance devices,” J. Appl. Phys., vol. 58, pp. 1366–1368, 1985.
-
(1985)
J. Appl. Phys.
, vol.58
, pp. 1366-1368
-
-
Capasso, F.1
Kiehl, R.A.2
-
8
-
-
0023039897
-
Novel triode device using metal-insulator superlattice proposed for high speed response
-
Y. Nakata, M. Asada, and Y. Suematsu, “Novel triode device using metal-insulator superlattice proposed for high speed response,” Electron. Lett., vol. 24, pp. 58–59, 1986.
-
(1986)
Electron. Lett.
, vol.24
, pp. 58-59
-
-
Nakata, Y.1
Asada, M.2
Suematsu, Y.3
-
9
-
-
0001216175
-
Proposed structure for large quantum interference effects
-
S. Datta, M.R. Melloch, S. Bandyopadhyay, and M.S. Lundstrom, “Proposed structure for large quantum interference effects,” Appl. Phys. Lett., vol. 48, pp. 487–489, 1986.
-
(1986)
Appl. Phys. Lett.
, vol.48
, pp. 487-489
-
-
Datta, S.1
Melloch, M.R.2
Bandyopadhyay, S.3
Lundstrom, M.S.4
-
10
-
-
0344687893
-
Novel highspeed transistor using electron-wave diffraction
-
K. Furuya, “Novel highspeed transistor using electron-wave diffraction,” J. Appl. Phys., vol. 62, no. 4, pp. 1492–1494, 1987.
-
(1987)
J. Appl. Phys.
, vol.62
, Issue.4
, pp. 1492-1494
-
-
Furuya, K.1
-
11
-
-
0019606502
-
Ballistic electron transport in semiconductors
-
K. Hess, “Ballistic electron transport in semiconductors,” IEEE Trans. Electron Devices, vol. ED-28, pp. 937–940, 1981.
-
(1981)
IEEE Trans. Electron Devices
, vol.28 ED
, pp. 937-940
-
-
Hess, K.1
-
12
-
-
1642339158
-
In-GaAs/InAlAs hot electron transistor
-
U.K. Reddy, J. Chen, C.K. Peng, and H. Morkoc, “In-GaAs/InAlAs hot electron transistor,” Appl. Phys. Lett., vol. 48, pp. 1799–1801, 1986.
-
(1986)
Appl. Phys. Lett.
, vol.48
, pp. 1799-1801
-
-
Reddy, U.K.1
Chen, J.2
Peng, C.K.3
Morkoc, H.4
-
13
-
-
0022910546
-
Hot electron transistors using In-GaAs/InAlGaAs heterostructure
-
Tokyo, Japan
-
K. Imamura, S. Muto, T. Fujii, H. Ohnishi, N. Yokoyama, S. Hiyamizu, and A. Shibatomi, “Hot electron transistors using In-GaAs/InAlGaAs heterostructure,” in Proc. 18th Int. Conf. Solid State Devices and Materials, Tokyo, Japan, 1986, pp. 765–766.
-
(1986)
Proc. 18th Int. Conf. Solid State Devices and Materials
, pp. 765-766
-
-
Imamura, K.1
Muto, S.2
Fujii, T.3
Ohnishi, H.4
Yokoyama, N.5
Hiyamizu, S.6
Shibatomi, A.7
-
14
-
-
0023363755
-
GalnAs/InP hot electron Transistors grown by OMVPE
-
K. Ishihara, S. Kinoshita, K. Furuya, Y. Miyamoto, K. Uesaka, and M. Miyauchi, “GalnAs/InP hot electron Transistors grown by OMVPE,” J. Appl. Phys., vol. 26, pp. L911–1913, 1987.
-
(1987)
J. Appl. Phys.
, vol.26
, pp. L911-L913
-
-
Ishihara, K.1
Kinoshita, S.2
Furuya, K.3
Miyamoto, Y.4
Uesaka, K.5
Miyauchi, M.6
-
16
-
-
0016496981
-
Scattering by periodic surfaces
-
P.C. Waterman, “Scattering by periodic surfaces,” J. Acoust. Soc. Amer., vol. 57, pp. 791–802, 1975.
-
(1975)
J. Acoust. Soc. Amer.
, vol.57
, pp. 791-802
-
-
Waterman, P.C.1
-
17
-
-
0019610296
-
Scattering of waves from periodic surfaces
-
Sept.
-
S.L. Chuang and J.A. Kong, “Scattering of waves from periodic surfaces,” Proc. IEEE, vol. 69, pp. 1132–1144, Sept. 1981.
-
(1981)
Proc. IEEE
, vol.69
, pp. 1132-1144
-
-
Chuang, S.L.1
Kong, J.A.2
|