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Volumn 24, Issue 8, 1988, Pages 1652-1658

Theoretical Properties of Electron Wave Diffraction Due to a Transversally Periodic Structure in Semiconductors

Author keywords

[No Author keywords available]

Indexed keywords

QUANTUM THEORY; SEMICONDUCTOR MATERIALS -- CHARGE CARRIERS;

EID: 0024055815     PISSN: 00189197     EISSN: 15581713     Source Type: Journal    
DOI: 10.1109/3.7095     Document Type: Article
Times cited : (19)

References (17)
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  • 3
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  • 4
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    • Esaki, L.1    Tsu, R.2
  • 5
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    • Possible application of surface-corrugated quantum thin films to negative resistance devices
    • H. Sakaki, K. Wagatsuma, J. Hamasaki, and S. Saito, “Possible application of surface-corrugated quantum thin films to negative resistance devices,” Thin Solid Films, vol. 36, p. 497, 1976.
    • (1976) Thin Solid Films , vol.36 , pp. 497
    • Sakaki, H.1    Wagatsuma, K.2    Hamasaki, J.3    Saito, S.4
  • 6
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    • Physical limits of heterostructure fieldeffect transistors and possibilities of novel quantum fieldeffect devices
    • Sept.
    • H. Sakaki, “Physical limits of heterostructure fieldeffect transistors and possibilities of novel quantum fieldeffect devices,” IEEE J. Quantum Electron., vol. QE-22, pp. 1845–1852, Sept. 1986.
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    • Sakaki, H.1
  • 7
    • 21544482969 scopus 로고
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    • F. Capasso and R.A. Kiehl, “Resonant tunneling transistor with quantum well base and high-energy injection: A new negative differential resistance devices,” J. Appl. Phys., vol. 58, pp. 1366–1368, 1985.
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    • Capasso, F.1    Kiehl, R.A.2
  • 8
    • 0023039897 scopus 로고
    • Novel triode device using metal-insulator superlattice proposed for high speed response
    • Y. Nakata, M. Asada, and Y. Suematsu, “Novel triode device using metal-insulator superlattice proposed for high speed response,” Electron. Lett., vol. 24, pp. 58–59, 1986.
    • (1986) Electron. Lett. , vol.24 , pp. 58-59
    • Nakata, Y.1    Asada, M.2    Suematsu, Y.3
  • 10
    • 0344687893 scopus 로고
    • Novel highspeed transistor using electron-wave diffraction
    • K. Furuya, “Novel highspeed transistor using electron-wave diffraction,” J. Appl. Phys., vol. 62, no. 4, pp. 1492–1494, 1987.
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  • 11
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  • 12
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    • U.K. Reddy, J. Chen, C.K. Peng, and H. Morkoc, “In-GaAs/InAlAs hot electron transistor,” Appl. Phys. Lett., vol. 48, pp. 1799–1801, 1986.
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    • S.L. Chuang and J.A. Kong, “Scattering of waves from periodic surfaces,” Proc. IEEE, vol. 69, pp. 1132–1144, Sept. 1981.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.