SCOPUS 정보 검색 플랫폼

Superlattices and Microstructures

Volumn 29, Issue 6, 2001, Pages 411-425

The quasibound state model for self-consistent characteristics of semiconductor intersubband devices

(3) Imam, N a Glytsis, E N a Gaylord, T K a

a GEORGIA INSTITUTE OF TECHNOLOGY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CARRIER CONCENTRATION; ELECTRON RESONANCE; ELECTRON TRANSITIONS; PARTIAL DIFFERENTIAL EQUATIONS; QUANTUM THEORY;

ASYMMETRIC FABRY-PEROT ELECTRON-WAVE INTERFERENCE FILTER; DOUBLE-BARRIER RESONANT STRUCTURE; ENERGY CONTINUUM MODEL; FERMI-DIRAC STATISTICS; QUASIBOUND STATE MODEL; QUASIBOUND STATE RESONANCE; SCHRODINGER EQUATION; SEMICONDUCTOR INTERSUBBAND DEVICES;

HETEROJUNCTIONS;

EID: 0035358918 PISSN: 07496036 EISSN: None Source Type: Journal
DOI: 10.1006/spmi.2001.0983 Document Type: Article

Times cited : (9)

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