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Volumn 3333, Issue , 1998, Pages 909-915

Etch integration issues in the development of deep submicron contacts utilizing DUV resist and organic BARC

Author keywords

Contacts; DUV resist; Etch resistance; Fluorocarbon etchants

Indexed keywords

ANTIREFLECTION COATINGS; JITTER; TABLE LOOKUP; THICKNESS MEASUREMENT;

EID: 0012024862     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.312473     Document Type: Conference Paper
Times cited : (2)

References (9)
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    • (1997) , vol.3049
  • 2
    • 0000186722 scopus 로고    scopus 로고
    • New ESCAP-type resist with enhanced etch resistance and its application to future DRAM and logic devices
    • W. Conley et al., "New ESCAP-type resist with enhanced etch resistance and its application to future DRAM and logic devices", Proc. SPIE, Vol. 3049, 282 (1997).
    • (1997) Proc. SPIE , vol.3049 , pp. 282
    • Conley, W.1
  • 3
    • 0020497931 scopus 로고
    • Dry etch resistance of Organic Materials
    • H. Gokan, S. Esho, and Y. Ohnishi, "Dry etch resistance of Organic Materials", J. Electrochem. Soc., 130, 143 (1983)
    • (1983) J. Electrochem. Soc , vol.130 , pp. 143
    • Gokan, H.1    Esho, S.2    Ohnishi, Y.3
  • 5
    • 0000785096 scopus 로고    scopus 로고
    • Dry etching resistance of resist based polymer and its improvement
    • S. Kishimura, Y. Kimura, J. Sakai, K. Tsujita, and Y. Matsui, "Dry etching resistance of resist based polymer and its improvement", Proc. SPIE, Vol. 3049, 944 (1997).
    • (1997) Proc. SPIE , vol.3049 , pp. 944
    • Kishimura, S.1    Kimura, Y.2    Sakai, J.3    Tsujita, K.4    Matsui, Y.5
  • 8
    • 6144231532 scopus 로고    scopus 로고
    • J. Finders, P. Tzviatkov, K. Ronse, L. Van den hove, Optimizing I-line lithography for 0.3 μm poly gate manufacturing, Solid State Technol., 40, S5 (1997).
    • J. Finders, P. Tzviatkov, K. Ronse, L. Van den hove, "Optimizing I-line lithography for 0.3 μm poly gate manufacturing", Solid State Technol., 40, S5 (1997).
  • 9
    • 0029770956 scopus 로고    scopus 로고
    • Linewidth control for 0.25 μm gate patterning
    • N.R. Farrar, "Linewidth control for 0.25 μm gate patterning", Microelectronics Engn., 30, 111 (1996).
    • (1996) Microelectronics Engn , vol.30 , pp. 111
    • Farrar, N.R.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.