The effect of implantation, energy, and dose on extended defect formation for MeV phosphorus implanted silicon

Applied Physics Letters

Volumn 75, Issue 17, 1999, Pages 2629-2631

  Jasper, Craig ^a   Hoover, Allen ^a   Jones, Kevin S ^b  

^a MOTOROLA INC   (United States)

^b UNIVERSITY OF FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0011952348     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.125100     Document Type: Article

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