An accelerometer made in a two-layer surface-micromachining technology

Sensors and Actuators, A: Physical

Volumn 54, Issue 1-3, 1996, Pages 651-655

  Fricke, Jorg ^a   Obermeier, Ernst ^a  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

Accelerometers; Surface micromachining

Indexed keywords

EID: 0011750155     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(97)80032-5     Document Type: Article

References (9)

1. L. Lin, A. McNair and R.T. Howe, Vacuum-encapsulated lateral microresonators, Proc. 7th Int. Conf. Solid-State Sensors and Actuators (Transducers '93), Yokohama, Japan, 7-10 June, 1993, pp. 270-273.
2. Lj. Ristic, R. Gutteridge, J. Kung, D. Koury, B. Dunn and H. Zunino, A capacitive type accelerometer with self-test feature based on a double-pinned polysilicon structure, Proc. 7th Int. Conf. Solid-State Sensors and Actuators (Transducers '93), Yokohama, Japan, 7-10 June, 1993, pp. 810-813.
3. C.H. Hsu and R.S. Muller, Micromechanical electrostatic voltmeter, IEEE Proc. Eurosensors IV, Karlsruhe, Germany, 1-3 Oct., 1990, pp. 659-662.
4. J.C. Cole, A new sense element technology for accelerometer subsystems, Proc. 6th Int. Conf. Solid-State Sensors and Actuators (Transducers '91), San Fracisco, CA, USA, 24-28 June, 1991, pp. 93-96.
5. K. Zipperer, internal study dealing with resonator structures.
6. V.M. McNeil, M.J. Novack and M.A. Schmidt, Design and fabrication of thin-film microaccelerometers using wafer bonding, Proc. 7th Int. Conf. Solid-State Sensors and Actuators (Transducers '93), Yokohama, Japan, 7-10 June, 1993.
7. P. Krulevitch, R.T. Howe, G.G. Johnson and J. Huang, Stress in undoped LPCVD polycrystalline silicon, Proc. IEEE, (1991) 949-952.
8. D. Kobayashi, T. Hirano, T. Furuhata and H. Fujita, An integrated lateral tunneling unit, IEEE Micro Electro Mechanical Syst., 4-7 Feb., 1992, pp. 214-219.
9. P.R. Scheeper, J.A. Voorthuyzen, W. Olthuis and P. Bergveld, Investigation of attractive forces between PECVD silicon nitride microstructures and an oxidized silicon substrate, Sensors and Actuators A, 30 (1992) 231-239.