Site identification of 6H-SiC using RBS/channeling technique

Materials Science Forum

Volumn 264-268, Issue PART 1, 1998, Pages 441-444

  Satoh, M ^a   Okamoto, K ^a   Iwata, Y ^a   Kuriyama, K ^a   Kanaya, M ^b   Ohtani, N ^b  

^a HOSEI UNIVERSITY   (Japan)

^b NIPPON STEEL CORPORATION   (Japan)

Author keywords

(1100) Face; Preferential Scattering; RBS Channeling

Indexed keywords

CRYSTAL ORIENTATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON CARBIDE;

CHANNELING TECHNIQUE; MONOATOMIC STRINGS;

SILICON WAFERS;

EID: 3743141699     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.441     Document Type: Article

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