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Volumn 120, Issue 31, 1998, Pages 7776-7782

Surface infrared studies of silicon/silicon oxide interfaces derived from hydridosilsesquioxane clusters

Author keywords

[No Author keywords available]

Indexed keywords

SILICON;

EID: 0032511387     PISSN: 00027863     EISSN: None     Source Type: Journal    
DOI: 10.1021/ja980741o     Document Type: Article
Times cited : (28)

References (23)
  • 1
    • 0003693693 scopus 로고    scopus 로고
    • The Electrochemical Society, Inc.: Pennington, NJ, and references therein
    • 2 Interface-3; Massoud, H. Z., Poindexter, E. H., Helms, C. R., Eds.; The Electrochemical Society, Inc.: Pennington, NJ, 1996; and references therein.
    • (1996) 2 Interface-3
    • Massoud, H.Z.1    Poindexter, E.H.2    Helms, C.R.3
  • 15
    • 0029488369 scopus 로고
    • For additional lead references on MIR and ATR experiments on surfaces containing Si-H see: Hattori, T. Crit. Rev. Solid State Mater. Sci. 1995, 20, 339.
    • (1995) Crit. Rev. Solid State Mater. Sci. , vol.20 , pp. 339
    • Hattori, T.1
  • 17
    • 17344373374 scopus 로고    scopus 로고
    • Private communication with Udo Pernisz, Division of Electronic Materials, Dow Corning
    • Private communication with Udo Pernisz, Division of Electronic Materials, Dow Corning.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.