Characterization of light emitting silicon nanopillars produced by lithography and etching

Applied Surface Science

Volumn 102, Issue , 1996, Pages 377-380

  Grigoropoulos, S ^a   Nassiopoulos, A G ^a   Travlos, A ^b   Papadimitriou, D ^c   Kennou, S ^d   Ladas, S ^e  

^a INSTITUTE OF MICROELECTRONICS   (Greece)

^b INSTITUTE OF NANOSCIENCE AND NANOTECHNOLOGY   (Greece)

^c NATIONAL TECHNICAL UNIVERSITY OF ATHENS   (Greece)

^d UNIVERSITY OF IOANNINA   (Greece)

^e UNIVERSITY OF PATRAS   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL IMPURITIES; ELECTRON DIFFRACTION; ETCHING; LITHOGRAPHY; LUMINESCENCE OF INORGANIC SOLIDS; NANOTECHNOLOGY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DEVICE STRUCTURES; SURFACE STRUCTURE; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

DEEP ULTRAHIGH VACUUM LITHOGRAPHY; FLUORINE-BASED HIGHLY ANISOTROPIC SILICON ETCHING; LUMINESCENCE PEAK; RED GREEN SPECTRAL REGION;

SEMICONDUCTING SILICON;

EID: 0030564932     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/0169-4332(96)00081-5     Document Type: Article

References (5)

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3. E. Gogolides, E. Tsoi, A.G. Nassiopoulos and M. Hatzakis, J. Vac. Sci. Technol. B 10 (1992) 2610.
4. E. Gogolides, S. Grigoropoulos and A.G. Nassiopoulos, Microelec. Eng. 27 (1995) 449.
5. P.B. Fischer, K. Dai, E. Chen and S.Y. Chan, J. Vac. Sci. Technol. B 11 (1993) 2524.