E-beam-induced distortions on SiN x-ray mask membrane

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3050, Issue , 1997, Pages 565-573

  Krasnoperov, Nikolai L ^a   Chen, Zheng ^a   Cerrina, Franco ^a  

^a Center for X ray Lithography   (United States)

Author keywords

E beam writing; In plane distortions; Resist stress

Indexed keywords

MASKS; MEMBRANES; NATURAL FREQUENCIES; PHOTORESISTS; SILICON NITRIDE; X RAY LITHOGRAPHY;

BEAM SYSTEMS; BEFORE AND AFTER; CAMBRIDGE; E-BEAM WRITING; EXPOSURE DOSE; FIDUCIALS; IN-PLANE DISTORTIONS; IN-SITU MEASUREMENTS; REFERENCE POINTS; RESIST STRESS; RESONANT FREQUENCIES; STRESS COEFFICIENTS; STRESS DEPENDENCES; THEORETICAL VALUES; X-RAY MASKS;

PROCESS CONTROL;

EID: 0010365308     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.275949     Document Type: Conference Paper

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