STM observation of nickel silicides on Si(001)

Applied Physics A: Materials Science and Processing

Volumn 66, Issue SUPPL. 1, 1998, Pages

  Yoshimura, M ^a   Ono, I ^a   Ueda, K ^a  

^a TOYOTA TECHNOLOGICAL INSTITUTE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CLEAN SURFACES; ELEVATED TEMPERATURE; FORM CLUSTERS; HYDROGEN-TERMINATED SURFACES; IN-PLANE; INTER-DIFFUSION; NI ATOMS; NI DIFFUSION; NICKEL SILICIDE; ROOM TEMPERATURE; SI (001) SUBSTRATE; SI(0 0 1); SI-H BONDS;

DIFFUSION; MORPHOLOGY; NICKEL ALLOYS; NICKEL COMPOUNDS; SCANNING TUNNELING MICROSCOPY; SILICIDES; SILICON;

SURFACE MORPHOLOGY;

EID: 0010041219     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s003390051293     Document Type: Article

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