Growth and annihilation of nickel silicide studied by scanning tunneling microscopy

Surface Science

Volumn 357-358, Issue , 1996, Pages 917-920

  Yoshimura, M ^a   Shinabe, S ^b   Yao, T ^c  

^a TOYOTA TECHNOLOGICAL INSTITUTE   (Japan)

^b HIROSHIMA UNIVERSITY   (Japan)

^c TOHOKU UNIVERSITY   (Japan)

Author keywords

Diffusion and migration; Epitaxy; Metal semiconductor interfaces; Nickel; Scanning tunneling microscopy; Silicides; Silicon

Indexed keywords

ANNEALING; DIFFUSION IN SOLIDS; EPITAXIAL GROWTH; FILM GROWTH; FILM PREPARATION; HIGH TEMPERATURE EFFECTS; INTERFACES (MATERIALS); NICKEL COMPOUNDS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SILICON; SURFACE STRUCTURE; ULTRATHIN FILMS;

ANNIHILATION; DIFFUSION AND MIGRATION; METAL SEMICONDUCTOR INTERFACES; ROOM TEMPERATURE; SILICIDES;

SCANNING TUNNELING MICROSCOPY;

EID: 0030173931     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(96)00291-9     Document Type: Article

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