Development of a sessile drop method concerning czochralski si crystal growth

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 4 A, 1999, Pages 1847-1851

  Sakai, Susumu ^a,b   Huang, Xinming ^a   Okano, Yasunori ^b   Hoshikawa, Keigo ^a  

^a SHINSHU UNIVERSITY   (Japan)

^b SHIZUOKA UNIVERSITY   (Japan)

Author keywords

Czochralski silicon crystal growth; Oxygen dissolution rate; Oxygen transportation; Sessile drop; Silica glass; Silicon melt

Indexed keywords

EID: 0009985326     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.1847     Document Type: Article

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