Al 3p valence and excitonic states in GaSSb and GaAAs heterostructures as a function of growth process

Physical Review B - Condensed Matter and Materials Physics

Volumn 55, Issue 23, 1997, Pages 15727-15734

  Jonnard, P ^a   Vergand, F ^a   Bonnelle, C ^a   Leroux, M ^b   Massies, J ^b  

^a SORBONNE UNIVERSITÉ   (France)

^b CRHEA CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0009779035     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.55.15727     Document Type: Article

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