Monolayer control in the growth of (Al,Ga)Sb/GaSb single quantum wells: Application to the band offset and Γ-L crossover problems

Applied Physics Letters

Volumn 68, Issue 1, 1996, Pages 54-56

  Leroux, M ^a   Massies, J ^a  

^a CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; COMPOSITION; MOLECULAR BEAM EPITAXY; MONOLAYERS; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; THICKNESS CONTROL; THICKNESS MEASUREMENT;

ALUMINUM GALLIUM ANTIMONIDE; CONFINEMENT INDUCED CROSSOVERS; GALLIUM ANTIMONIDE; LUMINESCENCE ENERGY; VALENCE BAND OFFSET;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0029732203     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116755     Document Type: Article

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