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Volumn 449, Issue , 1997, Pages 307-312
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Low pressure CVD of GaN from GaCl3 and NH3
a a a a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
EPITAXIAL GROWTH;
NITRIDES;
PHOTOLUMINESCENCE;
SECONDARY ION MASS SPECTROMETRY;
SEMICONDUCTING GALLIUM COMPOUNDS;
GALLIUM NITRIDE;
HETEROEPITAXIAL GROWTH;
CHEMICAL VAPOR DEPOSITION;
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EID: 0030645937
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (10)
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References (15)
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