Low temperature electroluminescence spectroscopy of high electron mobility transistors on InP

Journal of Applied Physics

Volumn 80, Issue 1, 1996, Pages 464-469

  Sylvestre, A ^a   Aniel, F ^a   Boucaud, P ^a   Julien, F H ^a   Crozat, P ^a   De Lustrac, A ^a   Adde, R ^a   Jin, Y ^b   Praseuth, J P ^b  

^a UNIVERSITÉ PARIS SACLAY   (France)

^b ORANGE LABS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0347095176     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.362749     Document Type: Article

References (15)

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