Self-heating effects in a InP/CdS/LaS cold cathode

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 16, Issue 6, 1998, Pages 3086-3096

  Malhotra, Aashish ^a   Modukuru, Yamini ^a   Cahay, Marc ^a  

^a University of Cincinnati   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0007914475     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.590446     Document Type: Article

References (36)

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17. THe driving force behind our simple analytical model is to obtain analytical expressions to describe the essential physics of the cold cathode operation. A more complete model would require sophisticated simulations tools, such as Monte Carlo description of carrier transport through the entire structure. This approach is far too complicated for the design of prototype cathodes.
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19. There are conflicting reports for the measured electron affinity of CdS. The affinity is known to vary with the surface orientation and the phase of the semiconductor material. Here, we use the electron affinity 4.2 eV reported in, O. Madelung, Semiconductors other than Group IV Elements and III-V Compounds (Springer, New York, 1992).
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30. 1 was used in the numerical examples of Ref. 9.
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35. -1 by Raman spectroscopy (P. Boolchand, private communication).
36. 0 for the operating range of biases investigated in all numerical simulations.