Current crowding effects in a CdS/LaS cold cathode

Journal of Applied Physics

Volumn 81, Issue 8, 1997, Pages 3707-3715

  Mumford, P D ^a   Cahay, M ^b  

^a AIR FORCE RESEARCH LABORATORY   (United States)

^b University of Cincinnati   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001447171     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.365492     Document Type: Article

References (14)

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2. I. Brodie and C. A. Spindt, Adv. Electron. Electron. Phys. 83, 2 (1992).
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4. A. I. Akinwande, P. P. Ruden, B. L. Goldenberg, D. K. Arch, and J. King, in Proceedings of 1994 Tri-Service (NASA) Cathode Workshop, Cleveland, OH, March 1994, p. 105.
5. P. D. Mumford and M. Cahay, J. Appl. Phys. 79, 2176 (1996).
6. P. R. Bell, Negative Electron Affinity Devices (Clarendon, Oxford, 1973).
7. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981), p. 291.
8. em we limited the number of traversals of the semimetallic slab to five. This is a good approximation since, in our numerical examples, γ is equal to 0.23. A more elaborate treatment of the multiple reflections in the LaS slab should include the fact that electrons lose energy in each crossing and eventually do not have enough energy to surmount the barrier at the semimetal-vacuum interface. This would require a more detailed model of carrier transport based, for instance, on a Monte Carlo simulation of the entire structure.
9. N. W. Aschcroft and N. D. Mermin, Solid State Physics (Saunders College Press, Philadelphia, PA, 1976).
10. E. S. Kohn, J. Appl. Phys. 42, 2493 (1971).
11. 2.
12. J. A. Edminister, Electromagnetics, Schaum's Outline Series (McGraw-Hill, New York, 1979).
13. The room-temperature work function for LaS was calculated by extrapolating measured work function values at high temperature as reported by S. Fomenko, in Handbook of Thermionic Properties (Plenum, New York, 1966). Within the range of temperature investigated by Fomenko, the LaS work function increases with temperature at a rate of 2 meV/K.
14. eVbim(sin z/z)cos z, where R is given by Eq. (4) and z is the solution of Eq. (17).