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Applied Surface Science

Volumn 107, Issue , 1996, Pages 161-171

Modeling of silicon atomic-layer-epitaxy

(4) Sugahara, Satoshi a Hasunuma, Eiji a Imai, Sigeru a Matsumura, Masakiyo a

a TOKYO INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; EPITAXIAL GROWTH; FILM GROWTH; HYDROGEN; MATHEMATICAL MODELS; MONOLAYERS; REACTION KINETICS; SURFACE PHENOMENA;

ATOMIC LAYER EPITAXY;

SEMICONDUCTING SILICON;

EID: 0030566234 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/S0169-4332(96)00491-6 Document Type: Article

Times cited : (15)

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