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Volumn E82-C, Issue 11, 1999, Pages 1943-1950

Low-noise, low-power wireless prontend MMICs using SiGe HBTs

Author keywords

Electronic noise; Heterojunction bipolar transistors; Microwave circuits; Receivers; Silicon germanium; Wireless

Indexed keywords


EID: 0006425062     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (2)

References (23)
  • 1
    • 33746397288 scopus 로고    scopus 로고
    • Wireless transceivers in CMOS 1C technology -The new wave
    • A.A. Abidi, "Wireless transceivers in CMOS 1C technology -The new wave," Proc. Asia-Pacific Microwave Conference, pp.231-238, 1998.
    • (1998) Proc. Asia-Pacific Microwave Conference , pp. 231-238
    • Abidi, A.A.1
  • 5
    • 0030655062 scopus 로고    scopus 로고
    • A very wide-tuning range 5GHz-band Si bipolar VCO using three-dimensional MMIC technology
    • Denver, CO, Technical Digest, vol.3, June 8-19
    • K. Kamagowa, K. Nishikawa, C. Yamaguchi, M. Hirano, I. Toyoda, and T. Tokumitsu, "A very wide-tuning range 5GHz-band Si bipolar VCO using three-dimensional MMIC technology," 1997 IEEE Int. Microwave Symposium, Denver, CO, Technical Digest, vol.3, pp.1221-1224, June 8-19, 1997.
    • (1997) 1997 IEEE Int. Microwave Symposium , pp. 1221-1224
    • Kamagowa, K.1    Nishikawa, K.2    Yamaguchi, C.3    Hirano, M.4    Toyoda, I.5    Tokumitsu, T.6
  • 10
    • 33746403069 scopus 로고    scopus 로고
    • A. Schuppen, Personal Communication, July
    • A. Schuppen, Personal Communication, July 1997.
    • (1997)
  • 13
    • 0017474062 scopus 로고
    • Limitations of Nielsen's and related noise equations applied to microwave bipolar transistors, and a new expression for the frequency and current dependent noise figure
    • R.J. Hawkins, "Limitations of Nielsen's and related noise equations applied to microwave bipolar transistors, and a new expression for the frequency and current dependent noise figure," Solid State Electronics, vol.20, pp.191-196, 1977.
    • (1977) Solid State Electronics , vol.20 , pp. 191-196
    • Hawkins, R.J.1
  • 14
    • 0027111512 scopus 로고
    • Noise characterization of Si/SiGe heterojunction bipolar transistors at microwave frequencies
    • H. Schumacher, U. Erben, and A. Gruhle, "Noise characterization of Si/SiGe heterojunction bipolar transistors at microwave frequencies," Electron. Lett., vol.28, p.1167, 1992.
    • (1992) Electron. Lett. , vol.28 , pp. 1167
    • Schumacher, H.1    Erben, U.2    Gruhle, A.3
  • 16
    • 0027542042 scopus 로고
    • An exact expression for the noise resistance Rn for the Hawkins bipolar noise model
    • R.A. Pucel and U.L. Rohdc, "An exact expression for the noise resistance Rn for the Hawkins bipolar noise model," Microwave and Guided-Wave Letters, vol.3, pp.35-37, 1993.
    • (1993) Microwave and Guided-Wave Letters , vol.3 , pp. 35-37
    • Pucel, R.A.1    Rohdc, U.L.2
  • 18
    • 0033334643 scopus 로고    scopus 로고
    • Low dc power Si-MOSFET L- And C-band low noise amplifiers fabricated by SIMOX technology
    • March (see Fig. 9 there).
    • M. Harada and T. Tsukahara, "Low dc power Si-MOSFET L- and C-band low noise amplifiers fabricated by SIMOX technology," IEICE Tïans. Electron., voI.E82-C, no.3, pp.553-558, March 1999 (see Fig. 9 there).
    • (1999) IEICE Tïans. Electron. , vol.82 , Issue.3 , pp. 553-558
    • Harada, M.1    Tsukahara, T.2
  • 20
    • 0032121292 scopus 로고    scopus 로고
    • Application of SiGe heterojunction bipolar transistors in 5.8 GHz and 10 GHz low-noise amplifiers
    • vol.34, pp.1498-1500
    • U. Erben, H. Schumacher, A. Schuppen, and J. Arndt, "Application of SiGe heterojunction bipolar transistors in 5.8 GHz and 10 GHz low-noise amplifiers," Electron. Lett., vol.34, pp.1498-1500, 1998.
    • (1998) Electron. Lett.
    • Erben, U.1    Schumacher, H.2    Schuppen, A.3    Arndt, J.4
  • 21
    • 0026124347 scopus 로고
    • Gilbert multiplier as an active mixer with conversion gain bandwidth upto 17GHz
    • P. Weger, G. Schultes, L. Treitinger, E. Bertagnolli, and K. Ehinger, "Gilbert multiplier as an active mixer with conversion gain bandwidth upto 17GHz," Electron. Lett., vol.27, pp.570-571, 1991.
    • (1991) Electron. Lett. , vol.27 , pp. 570-571
    • Weger, P.1    Schultes, G.2    Treitinger, L.3    Bertagnolli, E.4    Ehinger, K.5
  • 23
    • 0032181456 scopus 로고    scopus 로고
    • Low-power low-noise active mixers for 5.7 and 11.2 GHz using commercially available SiGe HBT MMIC technology
    • W. Dürr, U. Erben, A. Schuppen, H. Dietrich, and H. Schumacher, "Low-power low-noise active mixers for 5.7 and 11.2 GHz using commercially available SiGe HBT MMIC technology," Electron. Lett., vol.34, pp.1994-1996, 1998.
    • (1998) Electron. Lett. , vol.34 , pp. 1994-1996
    • Dürr, W.1    Erben, U.2    Schuppen, A.3    Dietrich, H.4    Schumacher, H.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.