Growth temperature window and self-limiting process in sub-atomic-layer epitaxy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 7, 1996, Pages 4011-4015

  Ishida, Masahiro ^a   Yamashita, Mitsutomi ^a   Nagata, Yoshio ^a   Suda, Yoshiyuki ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

ALE; Atomic layer epitaxy; Laser excitation; Self limiting adsorption; Self limiting mechanism; Si; Si2H6; Temperature window

Indexed keywords

ADSORPTION; ATOMIC PHYSICS; EXPERIMENTS; GASES; LASER APPLICATIONS; TEMPERATURE;

ATOMIC LAYER EPITAXY; LASER EXCITATION; SELF-LIMITING MECHANISM; TEMPERATURE WINDOW;

EPITAXIAL GROWTH;

EID: 0030196967     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.4011     Document Type: Article

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