Polarization anisotropy in ordered GaInP optoelectronic devices

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3283, Issue , 1998, Pages 666-674

  Greger, Erik ^a   Kippenberg, T ^b   Kiesel, Peter ^b   Moser, Michael ^a   Gulden, Karlheinz H ^a   Döhler, Gottfried H ^b  

^a CSEM   (Switzerland)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; ANISOTROPY; CRYSTAL SYMMETRY; ELECTROOPTICAL DEVICES; METALLORGANIC VAPOR PHASE EPITAXY; OPTOELECTRONIC DEVICES; TRANSISTORS;

AB SORPTION COEFFICIENTS; ABSORPTION LAYERS; CRYSTAL DIRECTIONS; ELECTRONIC COMPONENTS; INCIDENT LIGHTS; LINEARLY POLARIZED; MOVPE GROWTHS; POLARIZATION ANISOTROPIES; SWITCHING CONTRASTS; THRESHOLD SWITCHES; TRANSISTOR AMPLIFIERS; TRANSMISSION EXPERIMENTS; WORKING POINTS;

POLARIZATION;

EID: 0005872795     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.316718     Document Type: Conference Paper

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