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Volumn 204, Issue 1, 1997, Pages 98-101
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Femtosecond study of carrier cooling and exciton formation in the layered III-VI semiconductor GaSe
c
EPFL
(Switzerland)
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Author keywords
[No Author keywords available]
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Indexed keywords
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EID: 0040056385
PISSN: 03701972
EISSN: None
Source Type: Journal
DOI: 10.1002/1521-3951(199711)204:1<98::AID-PSSB98>3.0.CO;2-G Document Type: Article |
Times cited : (2)
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References (14)
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