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Volumn 58, Issue 16, 1998, Pages 10443-10451

Resonant hyper-Raman scattering in semiconductors

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Indexed keywords


EID: 0005373090     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.58.10443     Document Type: Article
Times cited : (12)

References (35)
  • 1
    • 0003827584 scopus 로고
    • H. Vogt, in Light Scattering in Solids II, edited by M. Cardona and G. Guntherödt, Topics in Applied Physics Vol. 50 (Springer, Berlin, 1982), p. 207.
    • (1982) Light Scattering in Solids II , pp. 207
    • Vogt, H.1
  • 4
    • 0000589965 scopus 로고
    • W. Richter, in Solid State Physics, edited by G. Höhler, Springer Tracts in Modern Physics Vol. 78 (Springer, Berlin, 1976), p. 121;
    • (1976) Solid State Physics , pp. 121
    • Richter, W.1
  • 19
  • 26
    • 0000556093 scopus 로고    scopus 로고
    • At low temperatures, the thermal expansion coefficient is positive for GaAs, while it is negative for ZnSe. The reason can be found in the Grüneisen parameters of the TA phonons near the (Formula presented) point. [See A. Debernardi and M. Cardona, Phys. Rev. B 54, 11 305 (1996)].
    • (1996) Phys. Rev. B , vol.54 , pp. 11305
    • Debernardi, A.1    Cardona, M.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.