Fine structure of the 2P exciton in ZnSe/GaAs films studied by resonant hyper-Rayleigh and hyper-Raman scatterings

Journal of Luminescence

Volumn 66-67, Issue 1-6, 1995, Pages 414-417

  Matsushita, Shun ichi ^a   Minami, Fujio ^a   Yoshida, Kouji ^a   Inoue, Kuon ^a   Akinaga, Hiroyuki ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FILM GROWTH; RAMAN SCATTERING; RAYLEIGH SCATTERING; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SUBSTRATES;

ENERGY SPLITTING; ENVELOPE HOLE COUPLING; RESONANT HYPER RAMAN SCATTERING; RESONANT HYPER RAYLEIGH SCATTERING;

EXCITONS;

EID: 0029459103     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-2313(95)00181-6     Document Type: Article

References (7)

1. H. Mahr H. Rabin C.L. Tang Quantum Electronics Vol. I 1975 Academic Press New York 285
2. F. Minami K. Inoue Y. Kato K. Yoshida K. Era Phys. Rev. Lett. 67 1991 3708
3. K. Inoue K. Yoshida F. Minami Y. Kato Phys. Rev. B 45 1992 8807
4. F. Minami Y. Kato K. Yoshida K. Inoue K. Era Appl. Phys. Lett. 59 1991 712
5. M. Sondergeld R.G. Stafford Phys. Rev. Lett. 35 1975
6. S. Matsushita F. Minami K. Yoshida K. Inoue H. Akinaga Proc. 22nd Int. Conf. of Semicond. Phys. 1995 World Scientific Singapore 321
7. N.O. Lipari A. Baldereschi Phys. Rev. B 6 1972 376