SiO2 etching using M = 0 helicon wave plasma

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 4 SUPPL. B, 1996, Pages 2477-2482

  Nogami, Hiroshi ^a   Nakagawa, Yukito ^a   Mashimo, Kimiko ^a   Ogahara, Yoneichi ^a   Tsukada, Tsutomu ^a  

^a Canon ANELVA Technix Corporation

Author keywords

Degree of dissociation; Low source power operation in continuous discharge; M = 0 helicon wave plasma; Net source power; Selectivity of Sio2 to Si; SiO2 etching; Time modulated discharge

Indexed keywords

DISSOCIATION; ELECTRIC DISCHARGES; ELECTRON EMISSION; EMISSION SPECTROSCOPY; HELICONS; PLASMAS; SILICA;

CONVENTIONAL CONTINUOUS DISCHARGE; DEGREE OF DISSOCIATION; HELICON WAVE PLASMA; HIGH ENERGY TAIL; TIME MODULATED DISCHARGE;

PLASMA ETCHING;

EID: 0030125481     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.2477     Document Type: Article

References (5)

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4. R. Lamendola, P. Fevia and R. d'Agostino: Plasma Sources Sci. Technol. 1 (1992) 256.
5. D. L. Flamm: Plasma Etching, eds. D. M. Manos and D. L. Flamm (Academic Press, San Diego, 1989) Chap. 2, p. 115.