Single layer chemical vapor deposition photoresist for 193 nm deep ultraviolet photolithography

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 16, Issue 6, 1998, Pages 3730-3733

  Nault, Mike ^a   Weidman, Tim ^a   Sugiarto, Dian ^a   Mui, David ^a   Lee, Carol ^b   Yang, John ^b  

^a APPLIED MATERIALS INC   (United States)

^b INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0004955243     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.590398     Document Type: Article

References (9)

1. M. Rothschild, J. A. Burns, S. G. Cann, A. R. Forte, C. L. Keast, R. R. Kunz, S. C. Palmateer, J. H. C. Sedlacek, and R. Uttaro, J. Vac. Sci. Technol. B 14, 4157 (1996); R. Allen, Semicond. Int. 20, 72 (1997).
2. M. Rothschild, J. A. Burns, S. G. Cann, A. R. Forte, C. L. Keast, R. R. Kunz, S. C. Palmateer, J. H. C. Sedlacek, and R. Uttaro, J. Vac. Sci. Technol. B 14, 4157 (1996); R. Allen, Semicond. Int. 20, 72 (1997).
3. T. W. Weidman and A. M. Joshi, Appl. Phys. Lett. 62, 372 (1993).
4. O. Joubert, T. Weidman, A. Joshi, R. Cirelli, S. Stein, J. T. C. Lee, and S. Vaidya, J. Vac. Sci. Technol. B 12, 3909 (1994).
5. T. W. Weidman, O. Joubert, A. M. Joshi, J. T. C. Lee, D. Boulin, E. A. Chandross, R. Cirelli, F. P. Klemens, H. L. Maynard, and V. M. Donnelly, J. Photopolym. Sci. Technol. 8, 679 (1995).
6. T. W. Weidman, Semiconductor Technology Symposium, Semicon, Japan, 1993.
7. C. Lee, S. Das, J. Yang, T. Weidman, D. Sugiarto, M. Nault, and Z. Osborne, Proc. SPIE 3333, 625 (1998).
8. Internal trends studies performed at Applied Materials, Inc.
9. Schumacher PAE-2.3.