How practical is 193 nm lithography?

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 6, 1996, Pages 4157-4161

  Rothschild, M ^a   Burns, J A ^a   Cann, S G ^a   Forte, A R ^a   Keast, C L ^a   Kunz, R R ^a   Palmateer, S C ^a   Sedlacek, J H C ^a   Uttaro, R ^a   Grenville, A ^b   Corliss, D ^c  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^b INTEL CORPORATION   (United States)

^c SEMATECH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 5344234836     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.588611     Document Type: Article

References (15)

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15. C. L. Keast, J. A. Burns, S. G. Cann, A. R. Forte, M. W. Horn, S. C. Palmateer, M. Rothschild, and D. C. Shaver, presented at the Second Annual 193 nm Lithography Conference, Colorado Springs, CO, August, 1996.