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Volumn 3333, Issue , 1998, Pages 625-633
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Feasibility of a CVD-resist-based lithography process at 193-nm wavelength
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Author keywords
193nm; Hardmask; Lithography; Photoresist; Top layer imaging; Top surface imaging
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Indexed keywords
AMORPHOUS SILICON;
LITHOGRAPHY;
MICROMETERS;
PHOTORESISTORS;
PHOTORESISTS;
REACTIVE ION ETCHING;
ROUGHNESS MEASUREMENT;
SILANES;
SILICA;
SURFACE TREATMENT;
THICKNESS MEASUREMENT;
193NM;
BASELINE PROCESS;
BI LAYERS;
DEPOSITION PARAMETERS;
DEVICE LAYERS;
HARDMASK;
HIGH SENSITIVITIES;
LINE EDGE ROUGHNESS;
LITHOGRAPHIC PROCESS;
LITHOGRAPHY PROCESS;
OPTICAL LITHOGRAPHIES;
ORGANOSILANE;
OXIDE PRECURSORS;
PHOTO OXIDATIONS;
PLANARIZING;
PROCESS TIME;
RESIST PROCESS;
SI LAYERS;
SILICON DIOXIDES;
SINGLE LAYERS;
THIN LAYERS;
THIN OXIDES;
TOP SURFACE IMAGING;
CHEMICAL VAPOR DEPOSITION;
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EID: 0009386726
PISSN: 0277786X
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1117/12.312392 Document Type: Conference Paper |
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Times cited : (7)
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References (7)
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