Correlation Between Highly and Moderately Accelerated Electromigration Tests

IEEE Electron Device Letters

Volumn 14, Issue 6, 1993, Pages 277-279

  Pierce, Donald G ^a   Brusius, Phillip G ^b  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b HONEYWELL   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER COMPOUNDS; SEMICONDUCTING ALUMINUM COMPOUNDS; TITANIUM COMPOUNDS; TUNGSTEN COMPOUNDS;

ACCELERATED ELECTROMIGRATION TESTS; PACKAGE-LEVEL TESTING; WAFER-LEVEL TESTING;

INTEGRATED CIRCUIT TESTING;

EID: 0027606657     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.215197     Document Type: Article

References (6)

1. J. R. Black, “Mass transport of aluminum by momentum exchange with conducting electrons,” in Proc. 1967 Annual Symp. Reliability Phy., pp. 149–151.
2. J. W. McPherson, “Stress dependent activation energy,” in Proc. 1986 Int. Reliability Phy. Symp., pp. 15–16.
3. B. J. Root and T. Turner, “Wafer level electromigration tests for production monitoring,” in Proc. 1985 Int. Reliability Phy. Symp., pp. 100–107.
4. H. A. Schafft, T. C. Staton, J. Mandel, and J. D. Shott, “Reproducibility of electromigration measurements,” IEEE Trans. Electron Devices, vol. ED-34, no. 3, p. 673, Mar. 1987.
5. J.R. Lloyd and J. A. Knight, “The relationship between electromigration induced short-circuit and open-circuit failure times in multi-layer VLSI technologies,” in Proc. 1984 Int. Reliability Phys. Symp., p. 48.
6. H. Schafft, J. Lechner, B. Sabi, M. Mahaney, and R. C. Smith, “The statistics for electromigration testing,” in Proc. 1988 Int. Reliability Phys. Symp., p. 193.