The effect of compressive strain on the performance of p-type quantum-well infrared photodetectors

IEEE Journal of Quantum Electronics

Volumn 33, Issue 7, 1997, Pages 1104-1113

  Chu, Jerome ^b,c,d   Li, Sheng S ^a,b,e,f,g  

^a IEEE

^b University of Florida   (United States)

^c UNIVERSITY OF FLORIDA   (United States)

^d STANFORD UNIVERSITY   (United States)

^e NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^f RICE UNIVERSITY   (United States)

^g APS ^*

Author keywords

Compressive strain layers; Dark current; Detectivity; Intersubband optical transition; Long wavelength infrared; p type; Quantum well infrared photodetectors; Responsivity

Indexed keywords

ELECTRON ABSORPTION; ELECTRON TRANSITIONS; INFRARED RADIATION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS;

COMPRESSIVE STRAIN; DARK CURRENTS; DETECTIVITY; INTERSUBBAND OPTICAL TRANSITIONS; LONG WAVELENGTH INFRARED; QUANTUM WELL INFRARED PHOTODETECTORS (QWIP); RESPONSIVITY;

INFRARED DETECTORS;

EID: 0031191041     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.594872     Document Type: Article

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