Room-temperature CW operation of II-VI lasers grown on ZnSe substrates cleaned with hydrogen plasma

Journal of Crystal Growth

Volumn 184-185, Issue , 1998, Pages 550-553

  Ohno, Tetsuichiro ^a   Ohki, Akira ^a   Matsuoka, Takashi ^b  

^a NTT CORPORATION   (Japan)

^b NTT Basic Research Laboratories   (Japan)

Author keywords

Homoepitaxy; Laser diode; Plasma cleaning; ZnSe

Indexed keywords

EID: 0004873781     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0022-0248(98)80114-0     Document Type: Article

References (4)

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3. A. Ohki, T. Ohno, T. Matsuoka, Y. Ichimura, Electron. Lett. 33 (1997) 990.
4. A. Ishibashi, IEEE J. Selected Topics Quantum Electron. 1 (1995) 741.