Charge redistribution and potential barrier reconstruction in SI GaAs caused by EL2 state change

Journal de Physique I

Volumn 6, Issue 9, 1996, Pages 1165-1187

  Kiliulis, R ^a   Kazukauskas V ^a   Storasta, J ^a   Vaitkus, J V ^a  

^a VILNIUS UNIVERSITY   (Lithuania)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; CHARGE TRANSFER; CRYSTAL DEFECTS; CRYSTAL LATTICES; HALL EFFECT; MATHEMATICAL MODELS; PERCOLATION (SOLID STATE); QUENCHING;

CHARGE REDISTRIBUTION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0030242338     PISSN: 11554304     EISSN: None     Source Type: Journal    
DOI: 10.1051/jp1:1996122     Document Type: Article

References (86)

1. Johnson E.J., Kafalas J.A. and Davies R.W., J. Appl. Phys. 54 (1983) 204.
2. Martin G.M., Farges J.P., Jacob G., Hailais J.P. and Poiblaud G., J. Appl. Phys. 51 (1980) 2840.
3. Holmes D.E., Chen R.T., Elliot K.R. and Kirkpatrick G.G., Appl. Phys. Lett. 40 (1982) 46.
4. Alaya S., Maaref H., von Bardeleben H.J. and Bourgoin J.C., Appl. Phys. Lett. 56 (1990) 1877.
5. Eizenberg M. and Hovel H.J., J. Appl. Phys. 69 (1991) 2256.
6. Suemitsu M., Nishijima M. and Miyamoto N., J. Appl. Phys. 69 (1991) 7240.
7. Krambrock K., Meyer B.K. and Spaeth J.-M., Phys. Rev. B 39 (1989) 1973.
8. Fang Z.-Q. and Look D.C., Mater. Sci. Forum 83-87 (1992) 991.
9. Christoffel E., Goltzene A. and Schwab C., J. Appl. Phys. 66 (1989) 5648.
10. Hendorfer G. and Kaufman U., Phys. Rev. B 43 (1991) 14569.
11. Weber E.R. and Kaminska M., 5th Int. Conf. on Semi-Insulating III-V Materials (Malmo, 1988) G. Grossmann and L. Ledebo, Eds. (Adam Hilger, Bristol and Philadelphia, 1988) p. 111.
12. Tang R.-S., Sergent L. and Blakemore J.S., J. Appl. Phys. 66 (1989) 256.
13. Siegel W., Kuehnel G., Witte H. and Flade T., J. Appl. Phys. 69 (1990) 2245.
14. Alt H.Ch., Shink H. and Packeiser G., 5th Int. Conf. on Semi-Insulating III-V Materials (Malmo, 1988) G. Grossmann and L. Ledebo, Eds. (Adam Hilger, Bristol and Philadelphia, 1988) p. 515.
15. Manasreh M.O., Fischer D.W. and Mitchel W.C., Phys. Stat. Sol. (b) 154 (1989) 11.
16. Dabrowski J., Scheffler M., Phys. Rev. B 40 (1989) 13091.
17. Bray R., Wan K. and Parker J.C., Phys. Rev. Lett. 57 (1986) 2439.
18. Mitonneau A. and Mircea A., Solid State Commun. 30 (1979) 157.
19. Skowronski M., Lagowski J. and Gatos H.C., Phys. Rev. B 32 (1985) 4264.
20. Kažukauskas V. and Kiliulis R., Phys. Stat. Sol. (b) 179 (1993) K21.
21. Trautman P., Walczak J.P., Kamiska M. and Baranowski J.M., Acta Phys. Polonica A 73 (1988) 419.
22. Kiliulis R., Rinkevičius V., Storasta J. and Vaitkus J., Phys. Stat. Sol. (a) 127 (1991) 415.
23. Alt H.Ch., Appl. Phys. Lett. 54 (1989) 1445.
24. Alt H.Ch., Semicond. Sci. Technol. 6 (1991) B121.
25. Benchiguer T., Christoffel E., Goltzene A., Mari B., Meyer B. and Schwab C., Jpn J. Appl. Phys. 29 (1990) L1569.
26. Martin J.M. and Makram-Ebeid S., in "Deep Centers in Semiconductors", S. Pantelides, Ed. (New-York, 1985) p. 399.
27. Fillard J.-P., Bonnafe J. and Castagne M., Solid State Commun. 52 (1984) 855.
28. Taniguchi M. and Ikoma T., Appl. Phys. Lett. 45 (1984) 69.
29. Cho H.Y., Kim E.K. and Min S.-K., Phys. Rev. B 39 (1989) 10376.
30. Shklowskii B.I. and Efros A.L., Sov. Phys. JETP 33 (1971) 468.
31. Sheinkman M.K. and Shik A.J., Phys. Tekh. Polupr. 10 (1976) 209 (in Russian).
32. Kitagawara Y. and Takenaka T., J. Appl. Phys. 71 (1992).
33. Irvine A.C. and Palmer D.W., Phys. Rev. Lett. 68 (1992) 2168.
34. Weber E.R., Ennon H., Kaufman U., Windscheif J., Schneider J. and Wosinski T., J. Appl. Phys. 53 (1982) 6140.
35. Petroff P.M. and Kimerling L.C., Appl. Phys. Lett. 29 (1976) 461.
36. Figielski T., Appl. Phys. A 36 (1985) 217.
37. Satoh M., Kawahara H. and Kuriyama, 5th Int. Conf. on Semi-Insulating III-V Materials (Malmo, 1988), G. Grossmann and L. Ledebo, Eds. (Adam Hilger, Bristol and Philadelphia, 1988) p. 189.
38. Ferre D. and Farvacque J.L., Revue Phys. Appl. 25 (1990) 323.
39. Pistoulet B., Girard P. and Hamamdjian G., J. Appl. Phys. 56 (1984) 2268.
40. Pistoulet B. and Hamamdjian G., Phys. Rev. B 35 (1987) 6305.
41. Kažukauskas V., Appl. Phys. A 60 (1995) 509.
42. Vaitkus J., Grigoryev J., Kažukauskas V., Osvensky V. and Storasta J., Sov. Phys. Coll. 27 (1987) 15.
43. Vaitkus J., Baubinas R., Kažukauskas V., Kiliulis R. and Storasta J., Inst. Phys. Conf. Ser. 129 (1992) 549.
44. Vaitkus J., Kažukauskas V., Kiliulis R. and Storasta J., Inst. Phys. Conf. Ser. 136 (1993) 755.
45. Grimmeis H.G. and Lebebo L.-A., J. Appl. Phys. 46 (1975) 2155.
46. Lucovsky G., Solid State Commun. 3 (1965) 299.
47. Fang Z.-Q. and Look D.C., Appl. Phys. Lett. 59 (1991) 48.
48. Haisty R.W., Appl. Phys. Lett. 10 (1963) 31.
49. Lin A.L., Omelianovski E. and Bube R.H., J. Appl. Phys. 47 (1976) 1852.
50. Siegel W., Witte H., Kuehnel G., Schneider H.A. and Flade T., Phys. Stat. Sol. (a) 108 (1988) 689.
51. Nojima S., J. Appl. Phys. 57 (1985) 620.
52. Rose A., Phys. Rev. 97 (1955) 322.
53. Smith R.A., Semiconductors (Cambridge Univ. Press, Second Ed., 1978).
54. Song Ch., Ge W., Jiang D. and Hsu Ch., Appl. Phys. Lett. 50 (1987) 1666.
55. Zhong X., Jiang D., Ge W. and Song Ch., Appl. Phys. Lett. 52 (1988) 628.
56. Alt H.Ch., Appl. Phys. Lett. 55 (1989) 2736.
57. Kaufmann U., Klausmann E., Schneider J. and Alt H.Ch., Phys. Rev. B 43 (1991) 12106.
58. Weber E.R. and Omling P., Festkoerperprobleme XXV (1985) 623.
59. Bittebierre J., Cox R.T., Picard R. and Molva E., "15th Int. Conf. on Defects in Semiconductors" (Budapest, 1988) p. 50.
60. Fisher D.W. and Manasreh M.O., J. Appl. Phys. 68 (1990) 2504.
61. Wagner J., Seelewind H. and Koidl H., Appl. Phys. Lett. 49 (1986) 1080.
62. Šantic B. and Desnica U.V., Appl. Phys. Lett. 56 (1990) 2636.
63. Farvacque J.L., Gruson B. and Vignaud D., Semicond. Sci. Technol. 2 (1987) 268.
64. Khachaturyan K., Weber E.R., Horigan J. and Ford W., Mater. Sci. Forum 83-87 (1992) 881.
65. Vaitkus J., Gaubas E., Jarašiūnas K. and Petrauskas M., Semicond. Sci. Technol. 7 (1992) A131.
66. Kaminska M. and Weber E.R., in "Imperfections in III/V Materials. Semiconductors and Semimetals", Vol. 38, E.R. Weber Ed. (Academic, Boston, 1993) Ch. 2.
67. Strauss U., Ruble W.W. and Kohler K., Appl. Phys. Lett. 62 (1993) 55.
68. Silverberg P., Omling P. and Samuelson L., Appl. Phys. Lett. 52 (1988) 1689.
69. Bardeleben H.J.V., Bagrave N.T. and Bourgoin J.C., Appl. Phys. Lett. 51 (1987) 1451.
70. Bourgoin J.C., Bardeleben H.J.V. and Stievenard D., J. Appl. Phys. 64 (1988) R65.
71. Vaitkus J., Storasta J., Pincevičius A., Petrauskas M. and Kažukauskas V., Sov. Phys. Coll. 28 (1988) 59.
72. Braunlich P., J. Appl. Phys. 39 (1968) 2953.
73. Lipskis K., Sakalas A. and Viscakas J., Phys. Stat. Sol. (a) 2 (1970) 225.
74. Rinkevičius V. and Kavaliauskienė G., J. Phys. D 27 (1994) 1267.
75. Dischler B. and Fuchs F., 5th Int. Conf. on Semi-Insulating III-V Materials (Malmo, 1988) G. Grossmann and L. Ledebo, Eds. (Adam Hilger, Bristol and Philadephia, 1988) p. 139.
76. Jimenez J., Hernandez P. and de Saja J.A., Phys. Rev. B 35 (1986) 3832.
77. Buyanova I.A., Sovchuk A.U. and Sheinkman M.K., Pis'ma v ZTF 16 (1990) 40 (in Russian).
78. Kaminska M., Parsey J.M., Lagowski J. and Gatos H.C., Appl. Phys. Lett. 41 (1982) 989.
79. Caldas M.J., Dabrowcki J., Fazzio A. and Scheffler M., Phys. Rev. Lett. 65 (1990) 2046.
80. Chadi D.J. and Chang K.J., Phys. Rev. Lett. 60 (1988) 2187.
81. Samara G.A., Vook D.W. and Gibbons J.F., Phys. Rev. Lett. 68 (1992) 1582.
82. Fang Z.-Q., Look B.C., Appl. Phys. Lett. 66 (1995) 3033.
83. Kalinushkin V.P., Karataev V.V., Koval'chuk I.A., Markov A.V., Omel'yanovsky E.M., Polyakov A.J., Prokhorov A.M., Raikhshtein V.I. and Stepancova I.V., 10th All-Union Conf. on Semiconductor Physics, Part 2 (Minsk, 1985) p. 168.
84. Kažukauskas V. and Vaitkus J., Z. Phys. B 94 (1994) 401.
85. Voronkov V.V., Voronkova G.I. and Iglytsin M.I., Sov. Phys. Semicond. 4 (1971) 1949.
86. Look B.C., J. Electrochem. Soc. 137 (1990) 260.