Time-resolved photoluminescence of heavily nitrogen-doped ZnSe: Role of fluctuations

Journal of Crystal Growth

Volumn 184-185, Issue , 1998, Pages 525-530

  Kuskovsky, I ^a   Li, D ^a   Neumark, G F ^a   Moldovan, M ^b   Giles, N C ^b   Bondarev, V N ^c   Pikhitsa, P V ^c  

^a Och Spine at New York Presbyterian Hospitals   (United States)

^b WEST VIRGINIA UNIVERSITY   (United States)

^c ODESSA NATIONAL UNIVERSITY   (Ukraine)

Author keywords

Compensation; Compound semiconductors; Doping; Fluctuations; Photoluminescence; Time decay; ZnSe : N

Indexed keywords

EID: 0004169690     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0022-0248(98)80109-7     Document Type: Article

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