Diffusion barrier mechanism of extremely thin tungsten silicon nitride film formed by ECR plasma nitridation

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 3 SUPPL. B, 1998, Pages 1251-1255

  Hirata, Akihiko ^a   Machida, Katsuyuki ^a   Maeyama, Satoshi ^b   Watanabe, Yoshio ^b   Kyuragi, Hakaru ^a  

^a NTT CORPORATION   (Japan)

^b NTT Basic Research Laboratories   (Japan)

Author keywords

Barrier capability; ECR plasma nitridation; Local atomic ordering; WSiN

Indexed keywords

EID: 0003726338     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.1251     Document Type: Article

References (9)

1. Y. Toyoda, T. Fukuda, T. Mori, M. Hasegawa and N. Mikami: Tech. Rep. IEICE SDM 95-207 (1996) 41 [in Japanese].
2. T. Iijima, Y. Shimooka, G. Minamihaba, T. Kawanoue, H. Tamura, H. Hirabayashi, N. Sakurai, H. Ohkawa, T. Kubota, Y. Mase, M. Koyama, J. Ooshima and J. Wada: VLSI Multilevel Interconnection Conf., 1996 (1996) p. 168.
3. H. Sugawara and J. Nagano: Appl. Surf. Sci. 41/42 (1989) 207.
4. H. Sayama, T. Kuroi, S. Shimizu, M. Shirahata, Y. Okumura, M. Inuishi and H. Miyoshi: Int. Electron Device Meet., 1996 (1996) p. 583.
5. M. T. Takagi, K. Miyashita, H. Koyama, K. Nakajima, K. Miyano, Y. Akasaka, Y. Hiura, S. Inaba, A. Azuma, H. Koike, H. Yoshimura, K. Suguro and H. Ishiuchi: Int. Electron Device Meet., 1996 (1996) p. 455.
6. G. Minamihaba, Y. Shimooka, H. Tamura, T. Iijima, T. Kawanoue, H. Hirabayashi, N. Sakurai, H. Ohkawa, T. Obara, H. Egawa, T. Idaka, T. Shimizu, M. Koyama, G. Ooshima and K. Suguro: Ext. Abstr. 1995 Int. Conf. Solid State Devices and Materials (Business Center for Academic Societies Japan, Tokyo, 1995) p. 97.
7. A. Hirata, T. Hosoya, K. Machida, H. Takaoka and H. Akiya: J. Electrochem. Soc. 143 (1996) p. 3747.
8. J. S. Reid, E. Kolawa, R. P. Ruiz and M.-A. Nicolet: Thin Solid Films 236 (1993) 319.
9. F. Pons, G. Tourillon and L. Thome: Phys. Lett. A 143 (1990) 425.