A WSixN diffusion barrier formed with electron cyclotron resonance nitrogen plasma

Journal of the Electrochemical Society

Volumn 143, Issue 11, 1996, Pages 3747-3751

  Hirata, A ^a   Hosoya, T ^a   Machida, K ^a   Takaoka, H ^a   Akiya, H ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; ANNEALING; DIFFUSION IN SOLIDS; DOPING (ADDITIVES); ELECTRON CYCLOTRON RESONANCE; NITROGEN; PLASMAS; SILICON NITRIDE; THIN FILMS; TUNGSTEN COMPOUNDS;

DIFFUSION BARRIERS; TUNGSTEN SILICON NITRIDES;

METALLIC FILMS;

EID: 0030285751     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837283     Document Type: Article

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