In-Situ Electrical Monitoring and Contactless Measurement Techniques for Enhanced FIB Modifications

Conference Proceedings from the International Symposium for Testing and Failure Analysis

Volumn , Issue , 1998, Pages 119-125

  Desplats, R ^a   Benbrik, J ^a   Perdu, P ^a   Benteo, B ^a   Marc, F ^b   Danto, Y ^b  

^a CNES   (France)

^b UNIVERSITÉ DE BORDEAUX   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; COMPUTER SOFTWARE; ELECTRIC POTENTIAL; IMAGE ANALYSIS; INTEGRATED CIRCUITS; ION BEAMS; MODIFICATION; RESEARCH LABORATORIES; VACUUM;

CONTACTLESS MEASUREMENTS; FOCUSED ION BEAMS;

FAILURE ANALYSIS;

EID: 0003645338     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. R. G. Lee and J.C Morgan, "Integration of Focused Ion Beam System in a Failure Analysis Environment", ISTFA'91, pp 85-95.
2. Ann N. Campbell, Kenneth A. Peterson, Daniel M. Fleetwood, Jerry M; Soden, "Effect of Focused Ion Beam Irradiation on MOS Transistors", IRPS'97, April 1997, pp 72-81.
3. Ann N. Campbell, J.M. Soden, J. Rife, "Electrical Biasing and Voltage Contrast Imaging in a Focused Ion Beam System", Proc. 21th Int. Symp. for Testing and Failure Analysis, ISTFA'95, pp 33-41, 1995.
4. J. Benbrik, B.Benteo, P. Perdu, "Electrical degradation of CMOS devices due to FIB exposure", P2ID - Plasma Induced Damage IEEE conference, 1998.
5. H.P. Feuerbaum, "Electron beam testing: Method and applications", Scanning electron microscopy, 1983.