Silicon selective growth on partially oxidized substrate by ECR plasma CVD technique

Vacuum

Volumn 59, Issue 2-3, 2000, Pages 672-677

  Sasaki, K ^a   Takada, T ^a   Yoshida, Y ^a  

^a KANAZAWA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0003347507     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0042-207x(00)00332-8     Document Type: Article

References (7)

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6. Eaglesham DJ, Gossmann HJ, Cerullo M. Phys Rev Lett 1990;65(10):1227-30.
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