Sub-picosecond wideband efficient saturable absorber created by high energy (200MeV) irradiation of Au+ ions into bulk GaAs

Electronics Letters

Volumn 34, Issue 8, 1998, Pages 818-820

  Mangeney, J ^a   Stelmakh, N ^a   Shen, A ^a   Lourtioz, J M ^a   Alexandrou, A ^b   Likforman, J P ^b   Clerc, C ^a   Thierry Mieg, V ^c   Lugagne Delpon, E ^d   Oudar, J L ^d  

^a CNRS   (France)

^b LABORATOIRE D OPTIQUE APPLIQUÉE   (France)

^c UNIV PARIS SUD   (France)

^d ORANGE LABS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; CHARGE CARRIERS; ION IMPLANTATION; RADIATION EFFECTS; RELAXATION PROCESSES; SILVER;

SUB-PICOSECOND WIDEBAND EFFICIENT SATURABLE ABSORBERS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0032047178     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19980319     Document Type: Article

References (7)

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