Charge degradation of MIS structures with phosphosilicate glass-passivated thermal silicon oxide at high-field tunnel injection

Russian Microelectronics

Volumn 26, Issue 6, 1997, Pages 378-383

  Andreev, V V ^a   Baryshev, V G ^a   Bondarenko, G G ^a   Stolyarov, A A ^a   Shakhnov, V A ^a  

^a NONE

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EID: 0010611712     PISSN: 10637397     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (18)

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