Investigation of growth conditions for epitaxial growth of SiC on Si in the solid-source molecular beam epitaxy

Materials Science and Engineering B

Volumn 46, Issue 1-3, 1997, Pages 164-167

  Pfennighaus, K ^a   Fissel, A ^a   Kaiser, U ^a   Wendt, M ^b   Krausslich J ^a   Peiter, G ^a   Schroter B ^a   Richter, W ^a  

^a FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

^b LEIBNIZ INSTITUTE OF PHOTONIC TECHNOLOGY   (Germany)

Author keywords

Growth mode; Molecular beam epitaxy; Silicon carbide; X ray diffraction

Indexed keywords

CRYSTAL ORIENTATION; CRYSTALLINE MATERIALS; FILM GROWTH; INFRARED SPECTROSCOPY; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; TWINNING; X RAY CRYSTALLOGRAPHY;

FULL WIDTH AT HALF MAXIMUM (FWHM); SOLID SOURCE MOLECULAR BEAM EPITAXY;

SILICON CARBIDE;

EID: 0031118504     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(96)01971-X     Document Type: Article

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