Growth and characterization of β-FeSi2 thin films prepared by laser ablation method

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3550, Issue , 1998, Pages 129-140

  Kakemoto, H ^a,b   Makita, Y ^a   Sakuragi, S ^c   Show, Y ^d   Izumi, T ^d   Sakata, I ^a   Obara, A ^a   Kobayashi, N ^a   Ando, S ^b   Tsukamoto, T ^b  

^a ELECTROTECHNICAL LABORATORY   (Japan)

^b TOKYO UNIVERSITY OF SCIENCE   (Japan)

^c Union Material Inc   (Japan)

^d TOKAI UNIVERSITY   (Japan)

Author keywords

? fesi2 film growth of on si (100) substrate; ? fesi2 needle like crystal; Arf excimer laser ablation; Chemical vapor transport; Raman scattering and optical absorption

Indexed keywords

ABLATION; CRYSTAL IMPURITIES; CRYSTAL ORIENTATION; CRYSTAL SYMMETRY; ENERGY GAP; EXCIMER LASERS; FILM GROWTH; FILM PREPARATION; LASER ABLATION; LIGHT ABSORPTION; MAGNETIC MOMENTS; NEEDLES; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SINGLE CRYSTALS; THIN FILMS; TRANSPORT PROPERTIES;

ARF EXCIMER LASER; CHEMICAL VAPOR TRANSPORT; ELECTRON SPIN RESONANCE MEASUREMENTS; HORIZONTAL GRADIENT FREEZES; NEEDLE LIKE CRYSTAL; OPTICAL ABSORPTION MEASUREMENT; RESIDUAL IMPURITIES; SI (100) SUBSTRATE;

LASER MATERIALS PROCESSING;

EID: 0001740819     PISSN: 0277786X     EISSN: 1996756X     Source Type: Conference Proceeding    
DOI: 10.1117/12.317939     Document Type: Conference Paper

References (24)

1. J. Derrien, J. Chevrier, V. LeTranh and J.E. Mahan, Appl. Surf. Sci. 56-58, 382 (1992).
2. S. Mantl, Nucl. Instrm. Methods Phys. Res. Sect. B 80/81, 895 (1993).
3. T.Miki, Y. Matsui, K. Matsubara, K. Kishimoto, K.Nagao and Y.Fujii, Proceedings of the 12th Internationa] Conference on Thermoelectrics 29, (1994 November 9-11 Yokohama/Japan).
4. Y.Dusausoy, J.Protas, R.Wandiji and B.Roques, Acta. Cryst. B 27, 1209(1971).
5. N.E.Christensen, Phys. Rev. B 42, 7184 (1990).
6. D.H.Tassis, C.L.Mitsas, T.T.Zorba, C.A.Dimitriadis, O.Valassiades, D.I.Siapkas, M.Angelakeris, P.Poulopoulos and N.K.Flevaris, J. Appl. Phys. 80, 962(1996).
7. O.Kubaschewski: Iron-Binary Phase Diagram, Springer-Verlag, New York, 136 (1982).
8. H.Kakemoto, Y.Makita, H.Katsumata, T.Iida, C.Stauter, A.Obara, H.Shibata, Y.Tsai, S.Sakuragi, N.Kobayashi, M.Hasegawa, S.Uekusa and T.Tsukamoto, SPIE Vol.2888, 32 (1996), Proceedings of Photonics China, (1996 November 6-7 Beijing/China).
9. J.Ouvrard, R.Wandji and B.Roques, J. Crytst. Growth, 13/14, 406 (1972).
10. Ch. Kloc, E.Arushanov, M.Wendl, H.Hohl, U.Malangand E.Bucher, J. Alloys and Compounds 219, 93 (1995).
11. B.D.Cullity, Elements of X-ray diffraction, Addison-Wesley Publishing Co, Inc., Reading, Massachusetts, U.S.A.
12. K.Irmscher, W.Gehlhoff, Y.Tomm, H.Lange and V.Alex, Phys. Rev. B 55, 4417 (1997).
13. D.L.Rousseau, R.P.Bauman and S.P.S.Porto, J. Raman Spetrosc. 10, 253 (1081).
14. K.Lefki, P.Muret, E.Bustarret, N.Boutarek, R.Madar, J.Chevirer, J.Derrien, and M.Brunei, Solid State Comm. 80, 791, (1991).
15. E.K.Arushanov, R.Carles, Ch.Kloc, E.Bucher, J.Leotin and D.V.Smirnov, Compound Semiconductors 1996. Proc. 23 rd International. Symposium on Compound Semiconductors, St. Petersburg, Russia, (1996), IOP Publ. (in press).
16. T.Miki, Y.Matsui, K.Matsubara and K.Kishimoto, J. Appl. Phys. 73, 1693 (1994).
17. H.Kakemoto, Y.Makita, A.Obara, I.Sakamoto, N.Kobayashi, T.Higuchi, S.Shin, Y.Tsai, S.Sakuragi, S.Ando and T.Tsukamoto, (unpublished).
18. H.Fukumura, H.Nakaminami, S.Eura, H.Masuhara, and T.Kawai, Jpn. J. Appl. Phys. 28, L4412 (1988).
19. N.Inoue, S.Kashiwabara, S.Toshima and R.Fujimoto, Proc. of LAMP'92, Nagaoka 1105 (June, 1992).
20. X.Kang, K.Masugata and K.Yatsui, Jpn. J. Appl. Phys. 33, 1155 (1994).
21. Trans. Intern. Astron. Union 9, 216 (1957).
22. T.Sakamoto, T.Kawamura, S.Nago, G.Hashiguchi, K.Sakamoto and K.Kuniyoshi, J. Cryst. Growth, 81, 59 (1987).
23. A.B.Filonov, D.B.Migas, V.L.Shaposhnikov, N.N.Dorozhkin, G.V.Petrov, V.E.Borisenko, W.Henrion and H.Lange, J. Appl. Phys. 79, 7708 (1996).
24. H.Katsumata, Y.Makita, N.Kobayashi, H.Shibata, M.Hasegawa and S.Uekusa, Jpn. J. Appl. Phys. 36, 2802 (1997).