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Volumn 3333, Issue , 1998, Pages 324-333

Inorganic bottom ARC SiOxNy for interconnection levels on 0.18 μm technology

Author keywords

[No Author keywords available]

Indexed keywords

REFLECTION; TECHNOLOGY;

EID: 0001730901     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.312422     Document Type: Conference Paper
Times cited : (6)

References (5)
  • 1
    • 0031520893 scopus 로고    scopus 로고
    • Physical and optical properties of an antireflective layer based on SiOxNy
    • F.Gaillard and P.Schiavone «Physical and optical properties of an antireflective layer based on SiOxNy» J.Vac. Sci Technology, A15 (1997)
    • (1997) J.Vac. Sci Technology , vol.A15
    • Gaillard, F.1    Schiavone, P.2
  • 3
    • 58649092914 scopus 로고
    • Optimization of Anti-Reflection Layers for Deep UV Lithography
    • H.J Dijkstra and C.Juffermans «Optimization of Anti-Reflection Layers for Deep UV Lithography», SPIE vol 1927 (1993)
    • (1993) SPIE , vol.1927
    • Dijkstra, H.J.1    Juffermans, C.2
  • 4
    • 60949090004 scopus 로고    scopus 로고
    • Jeong Yun Yu et al «Quarter and subquarter micron DUV lithography with PECVD ARL : application and restriction», INTERFACE 97
    • Jeong Yun Yu et al «Quarter and subquarter micron DUV lithography with PECVD ARL : application and restriction», INTERFACE 97


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.