|
Volumn 3333, Issue , 1998, Pages 324-333
|
Inorganic bottom ARC SiOxNy for interconnection levels on 0.18 μm technology
|
Author keywords
[No Author keywords available]
|
Indexed keywords
REFLECTION;
TECHNOLOGY;
DAMASCENE LINES;
DIELECTRIC LAYERS;
GATE LEVELS;
K VALUES;
M-TECHNOLOGIES;
MINIMUM THICKNESS;
SWING CURVES;
CAVITY RESONATORS;
|
EID: 0001730901
PISSN: 0277786X
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1117/12.312422 Document Type: Conference Paper |
Times cited : (6)
|
References (5)
|