L-band 100-watts push-pull GaAs power FET

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 1998, Pages 703-706

  Ebihara, K ^a   Takahashi, H ^a   Tateno, Y ^a   Igarashi, T ^a   Fukaya, J ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; INTEGRATED CIRCUIT LAYOUT; SEMICONDUCTING GALLIUM ARSENIDE; SIGNAL DISTORTION;

PUSH-PULL CONFIGURATION;

MESFET DEVICES;

EID: 0031635785     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)